AMD R5316G1609U2K 8GB vs SK Hynix HMA81GS6JJR8N-VK 8GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

SK Hynix HMA81GS6JJR8N-VK 8GB

SK Hynix HMA81GS6JJR8N-VK 8GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

SK Hynix HMA81GS6JJR8N-VK 8GB

需要考虑的原因
SK Hynix HMA81GS6JJR8N-VK 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 73

左右 -115% 更低的延时
更快的读取速度，GB/s

15.7 6.3

测试中的平均数值
更快的写入速度，GB/s

11.9 5.2

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

SK Hynix HMA81GS6JJR8N-VK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 34
读取速度，GB/s

6.3 15.7
写入速度，GB/s

5.2 11.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1309 2803

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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AMD R5316G1609U2K 8GB

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SK Hynix HMA81GS6JJR8N-VK 8GB

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Crucial Technology CT102464BA160B.M16 8GB

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Hewlett-Packard 7EH55AA# 8GB

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Peak Electronics 256X64M-67E 2GB

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Corsair CMK8GX4M2C3000C16 4GB

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SK Hynix HMT325S6CFR8C-H9 2GB

King Tiger Technology Tigo-2400MHz-8G 8GB

King Tiger Technology Tigo-2400MHz-8G 8GB

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G Skill Intl F5-6400J3239G16G 16GB

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Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M378A2G43MB1-CTD 16GB

Samsung M378A2G43MB1-CTD 16GB

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ASint Technology SSA302G08-EGN1C 4GB

Kingston 9905734-062.A00G 32GB

Kingston 9905734-062.A00G 32GB