AMD R5316G1609U2K 8GB vs SK Hynix HMA82GS7AFR8N-UH 16GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

SK Hynix HMA82GS7AFR8N-UH 16GB

SK Hynix HMA82GS7AFR8N-UH 16GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

SK Hynix HMA82GS7AFR8N-UH 16GB

需要考虑的原因
SK Hynix HMA82GS7AFR8N-UH 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 73

左右 -161% 更低的延时
更快的读取速度，GB/s

13.7 6.3

测试中的平均数值
更快的写入速度，GB/s

10.4 5.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

SK Hynix HMA82GS7AFR8N-UH 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 28
读取速度，GB/s

6.3 13.7
写入速度，GB/s

5.2 10.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1309 2558

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-4000C18-8GTZRB 8GB

G Skill Intl F4-4000C18-8GTZRB 8GB

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A-DATA Technology AD73I1B1672EG 2GB

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Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB

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A-DATA Technology ADOVE1A0834E 1GB

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Wilk Elektronik S.A. GR2666S464L19/16G 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

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Kingston 9965640-008.A01G 32GB

Kingston 9965640-008.A01G 32GB

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Avant Technology W6451U67J7240NB 4GB

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Samsung M393B5270CH0-CH9 4GB

Crucial Technology CT8G4SFRA266.C8FE 8GB

Crucial Technology CT8G4SFRA266.C8FE 8GB

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V-Color Technology Inc. TN416G26D819-SB 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

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Crucial Technology CT16G4DFRA266.C8FB 16GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

G Skill Intl F4-2133C15-16GFX 16GB

G Skill Intl F4-2133C15-16GFX 16GB