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AMD R534G1601U1S-UO 4GB
Corsair CMSX32GX4M2A3000C16 16GB

AMD R534G1601U1S-UO 4GB vs Corsair CMSX32GX4M2A3000C16 16GB

总分
star star star star star
AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

总分
star star star star star
Corsair CMSX32GX4M2A3000C16 16GB

Corsair CMSX32GX4M2A3000C16 16GB

差异 规格 评论

差异

AMD R534G1601U1S-UO 4GB 需要考虑的原因
AMD R534G1601U1S-UO 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 31
    左右 13% 更低的延时
Corsair CMSX32GX4M2A3000C16 16GB 需要考虑的原因
Corsair CMSX32GX4M2A3000C16 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.3 left arrow 14.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.9 left arrow 9.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
AMD R534G1601U1S-UO 4GB
Corsair CMSX32GX4M2A3000C16 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 31
  • 读取速度，GB/s
    14.7 left arrow 17.3
  • 写入速度，GB/s
    9.2 left arrow 13.9
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 11 12 13 14 15 16 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2272 left arrow 3359

AMD R534G1601U1S-UO 4GB RAM的比较

AMD R534G1601U1S 4GB
Samsung M378B5273CH0-CH9 4GB

Corsair CMSX32GX4M2A3000C16 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
G Skill Intl F4-3466C16-16GTZ 16GB
G Skill Intl F4-3466C16-16GTZ 16GB
内存RAM
Samsung 16KTF1G64AZ-1G9P1 8GB
Samsung 16KTF1G64AZ-1G9P1 8GB
G Skill Intl F4-2133C15-16GFX 16GB
G Skill Intl F4-2133C15-16GFX 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston CBD24D4S7D8ME-16 16GB
Kingston CBD24D4S7D8ME-16 16GB
内存RAM
Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173EB0-YK0 4GB
Crucial Technology CT16G4DFD824A.M16FE 16GB
Crucial Technology CT16G4DFD824A.M16FE 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology BL16G32C16U4W.16FE 16GB
Crucial Technology BL16G32C16U4W.16FE 16GB
内存RAM
Samsung M393B4G70EMB-CK0 32GB
Samsung M393B4G70EMB-CK0 32GB
Kingston KHX2133C13D4/4GX 4GB
Kingston KHX2133C13D4/4GX 4GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
G Skill Intl F4-3200C16-16GTZSW 16GB
G Skill Intl F4-3200C16-16GTZSW 16GB
内存RAM
Kingston 99U5428-046.A00LF 4GB
Kingston 99U5428-046.A00LF 4GB
G Skill Intl F4-3200C14-8GTZSK 8GB
G Skill Intl F4-3200C14-8GTZSK 8GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Kingston 9905630-030.A00G 16GB
Kingston 9905630-030.A00G 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
A-DATA Technology AO1E34RCTV2-BZWS 32GB
A-DATA Technology AO1E34RCTV2-BZWS 32GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-3333C16-8GTZSW 8GB
G Skill Intl F4-3333C16-8GTZSW 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-3200C16-8GFX 8GB
G Skill Intl F4-3200C16-8GFX 8GB
内存RAM
Corsair CMD16GX3M4A2666C11 4GB
Corsair CMD16GX3M4A2666C11 4GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Crucial Technology BL16G26C16U4B.16FE 16GB
Crucial Technology BL16G26C16U4B.16FE 16GB
内存RAM