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AMD R534G1601U1S-UO 4GB
Crucial Technology BLS4G4S240FSD.M8FADM 4GB

AMD R534G1601U1S-UO 4GB vs Crucial Technology BLS4G4S240FSD.M8FADM 4GB

总分
star star star star star
AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

总分
star star star star star
Crucial Technology BLS4G4S240FSD.M8FADM 4GB

Crucial Technology BLS4G4S240FSD.M8FADM 4GB

差异 规格 评论

差异

AMD R534G1601U1S-UO 4GB 需要考虑的原因
AMD R534G1601U1S-UO 4GB
报告一个错误
Crucial Technology BLS4G4S240FSD.M8FADM 4GB 需要考虑的原因
Crucial Technology BLS4G4S240FSD.M8FADM 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 27
    左右 -8% 更低的延时
  • 更快的读取速度，GB/s
    15.4 left arrow 14.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 9.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
AMD R534G1601U1S-UO 4GB
Crucial Technology BLS4G4S240FSD.M8FADM 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 25
  • 读取速度，GB/s
    14.7 left arrow 15.4
  • 写入速度，GB/s
    9.2 left arrow 12.5
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2272 left arrow 2481

AMD R534G1601U1S-UO 4GB RAM的比较

AMD R534G1601U1S 4GB
Samsung M378B5273CH0-CH9 4GB

Crucial Technology BLS4G4S240FSD.M8FADM 4GB RAM的比较

TwinMOS 8DPT5MK8-TATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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SK Hynix HMT325S6CFR8C-PB 2GB
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Samsung M378A2G43MX3-CTD 16GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Crucial Technology BLS4G4S240FSD.M8FADM 4GB
Crucial Technology BLS4G4S240FSD.M8FADM 4GB
内存RAM
Avant Technology F6451U64F9333G 4GB
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Corsair CMK16GX4M2L3000C15 8GB
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内存RAM
G Skill Intl F5-6400J3239G16G 16GB
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Corsair CMH32GX4M4E3200C16 8GB
Corsair CMH32GX4M4E3200C16 8GB
内存RAM
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内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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Corsair CMR16GX4M2Z3200C16 8GB
Corsair CMR16GX4M2Z3200C16 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology CT8G4DFS824A.M8FA 8GB
Crucial Technology CT8G4DFS824A.M8FA 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
内存RAM
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Crucial Technology CB8GS2666.C8ET 8GB
Crucial Technology CB8GS2666.C8ET 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
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Crucial Technology BL32G32C16U4BL.M16FB 32GB
内存RAM
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Lexar Co Limited LD4AS016G-H3200GST 16GB
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Corsair CMSX32GX4M2A3200C22 16GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
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Crucial Technology CT8G4DFD8213.C16FDR2 8GB
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