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AMD R534G1601U1S-UO 4GB
Crucial Technology CT16G4DFD8266.C16FE 16GB

AMD R534G1601U1S-UO 4GB vs Crucial Technology CT16G4DFD8266.C16FE 16GB

总分
star star star star star
AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

总分
star star star star star
Crucial Technology CT16G4DFD8266.C16FE 16GB

Crucial Technology CT16G4DFD8266.C16FE 16GB

差异 规格 评论

差异

AMD R534G1601U1S-UO 4GB 需要考虑的原因
AMD R534G1601U1S-UO 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 32
    左右 16% 更低的延时
Crucial Technology CT16G4DFD8266.C16FE 16GB 需要考虑的原因
Crucial Technology CT16G4DFD8266.C16FE 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.6 left arrow 14.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.7 left arrow 9.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
AMD R534G1601U1S-UO 4GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 32
  • 读取速度，GB/s
    14.7 left arrow 16.6
  • 写入速度，GB/s
    9.2 left arrow 13.7
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2272 left arrow 3357

AMD R534G1601U1S-UO 4GB RAM的比较

AMD R534G1601U1S 4GB
Samsung M378B5273CH0-CH9 4GB

Crucial Technology CT16G4DFD8266.C16FE 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
内存RAM
Ramaxel Technology RMT3170EB68F9W1600 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Samsung M471A1K43CB1-CRC 8GB
Samsung M471A1K43CB1-CRC 8GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
Transcend Information TS1GLH64V4H 8GB
Transcend Information TS1GLH64V4H 8GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Avant Technology W641GU48J5213ND 8GB
Avant Technology W641GU48J5213ND 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BLS8G4D32AESBK.M8FE1 8GB
Crucial Technology BLS8G4D32AESBK.M8FE1 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Apacer Technology 78.CAGPP.ARC0B 8GB
Apacer Technology 78.CAGPP.ARC0B 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
JUHOR JHD3000U1908JG 8GB
JUHOR JHD3000U1908JG 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
G Skill Intl F4-3466C18-8GSXW 8GB
G Skill Intl F4-3466C18-8GSXW 8GB
内存RAM
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
Apacer Technology 78.BAGM6.40C0B 4GB
Apacer Technology 78.BAGM6.40C0B 4GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
SK Hynix HMA41GR7MFR8N-TF 8GB
SK Hynix HMA41GR7MFR8N-TF 8GB
内存RAM
Kingston 99U5474-037.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
Apacer Technology 78.C1GM3.C7Z0B 8GB
Apacer Technology 78.C1GM3.C7Z0B 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Corsair CM4X8GD3000C15K4 8GB
Corsair CM4X8GD3000C15K4 8GB
内存RAM