AMD R534G1601U1S-UO 4GB vs Crucial Technology CT4G4DFS8213.8FA11?? 4GB

总分

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

总分

Crucial Technology CT4G4DFS8213.8FA11?? 4GB

Crucial Technology CT4G4DFS8213.8FA11?? 4GB

差异规格评论

差异

AMD R534G1601U1S-UO 4GB

需要考虑的原因
AMD R534G1601U1S-UO 4GB

报告一个错误

Crucial Technology CT4G4DFS8213.8FA11?? 4GB

需要考虑的原因
Crucial Technology CT4G4DFS8213.8FA11?? 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 27

左右 -13% 更低的延时
更快的读取速度，GB/s

16.1 14.7

测试中的平均数值
更快的写入速度，GB/s

12.2 9.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R534G1601U1S-UO 4GB

Crucial Technology CT4G4DFS8213.8FA11?? 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 24
读取速度，GB/s

14.7 16.1
写入速度，GB/s

9.2 12.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2272 2719

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CM4X16GE2666C16K4 16GB

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SK Hynix HYMP112S64CP6-S6 1GB

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Samsung M471A1K43CB1-CRCR 8GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

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Kingston 9905403-134.A00LF 2GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

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Maxsun MSD48G30M3 8GB

Maxsun MSD48G30M3 8GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Corsair CMT16GX4M2C3600C18 8GB

Corsair CMT16GX4M2C3600C18 8GB

Samsung M393B1K70CH0-YH9 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE800SO51208