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AMD R534G1601U1S-UO 4GB
Kingmax Semiconductor GLLF62F-D8---------- 4GB
比较
AMD R534G1601U1S-UO 4GB vs Kingmax Semiconductor GLLF62F-D8---------- 4GB
总分
AMD R534G1601U1S-UO 4GB
总分
Kingmax Semiconductor GLLF62F-D8---------- 4GB
差异
规格
评论
差异
需要考虑的原因
AMD R534G1601U1S-UO 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
62
左右 56% 更低的延时
需要考虑的原因
Kingmax Semiconductor GLLF62F-D8---------- 4GB
报告一个错误
更快的读取速度,GB/s
16.2
14.7
测试中的平均数值
更快的写入速度,GB/s
9.7
9.2
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
AMD R534G1601U1S-UO 4GB
Kingmax Semiconductor GLLF62F-D8---------- 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
62
读取速度,GB/s
14.7
16.2
写入速度,GB/s
9.2
9.7
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2272
1772
AMD R534G1601U1S-UO 4GB RAM的比较
AMD R534G1601U1S 4GB
Samsung M378B5273CH0-CH9 4GB
Kingmax Semiconductor GLLF62F-D8---------- 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-3600C16-8GTZKK 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Kingston 9932301-P01.A00G 4GB
AMD R534G1601U1S-UO 4GB
Kingmax Semiconductor GLLF62F-D8---------- 4GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB
Kingston 9905316-106.A02LF 1GB
Essencore Limited IM44GU48N24-FFFHAB 4GB
Kingston 9905403-061.A00LF 2GB
Kingston KVR24N17S8/4 4GB
TwinMOS 8DPT5MK8-TATP 2GB
Dust Leopard DDR4-2400 C17 4GB 4GB
Samsung M393B2G70BH0-CH9 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
AMD R5S38G1601U2S 8GB
Good Wealth Technology Ltd. 8GB
Samsung M395T2863QZ4-CF76 1GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F3-14900CL8-4GBXM 4GB
Apacer Technology 78.CAGQE.C750B 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
INTENSO 5641162 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
Samsung M471B5273CH0-CH9 4GB
Micron Technology 16GB 2133MHz DIMM 16GB
报告一个错误
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Bug description
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