AMD R534G1601U1S-UO 4GB vs Panram International Corporation PUD42400C154G2NJK 4GB

总分

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

总分

Panram International Corporation PUD42400C154G2NJK 4GB

Panram International Corporation PUD42400C154G2NJK 4GB

差异规格评论

差异

AMD R534G1601U1S-UO 4GB

需要考虑的原因
AMD R534G1601U1S-UO 4GB

报告一个错误

更快的读取速度，GB/s

14.7 13.5

测试中的平均数值
更快的写入速度，GB/s

9.2 8.3

测试中的平均数值

Panram International Corporation PUD42400C154G2NJK 4GB

需要考虑的原因
Panram International Corporation PUD42400C154G2NJK 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 27

左右 -4% 更低的延时
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R534G1601U1S-UO 4GB

Panram International Corporation PUD42400C154G2NJK 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 26
读取速度，GB/s

14.7 13.5
写入速度，GB/s

9.2 8.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2272 2157

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP112U64CP8-S6 1GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Crucial Technology CB4GU2400.M8E 4GB

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Ramsta Ramsta-2400Mhz-4G 4GB

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Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

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Corsair CMT16GX4M2C3466C16 8GB

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Kingston KHX1600C10D3/8GXF 8GB

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G Skill Intl F4-4000C18-32GTZN 32GB