RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
AMD R538G1601U2S-UO 8GB
Apacer Technology 78.C1GMS.C7Z0C 8GB
比较
AMD R538G1601U2S-UO 8GB vs Apacer Technology 78.C1GMS.C7Z0C 8GB
总分
AMD R538G1601U2S-UO 8GB
总分
Apacer Technology 78.C1GMS.C7Z0C 8GB
差异
规格
评论
差异
需要考虑的原因
AMD R538G1601U2S-UO 8GB
报告一个错误
需要考虑的原因
Apacer Technology 78.C1GMS.C7Z0C 8GB
报告一个错误
低于PassMark测试中的延时,ns
24
26
左右 -8% 更低的延时
更快的读取速度,GB/s
16.9
14.2
测试中的平均数值
更快的写入速度,GB/s
12.8
10.0
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
AMD R538G1601U2S-UO 8GB
Apacer Technology 78.C1GMS.C7Z0C 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
24
读取速度,GB/s
14.2
16.9
写入速度,GB/s
10.0
12.8
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2634
3052
AMD R538G1601U2S-UO 8GB RAM的比较
Kingston 99U5471-020.A00LF 4GB
G Skill Intl F4-3200C16-4GRK 4GB
Apacer Technology 78.C1GMS.C7Z0C 8GB RAM的比较
Kingston HP32D4U8S8HC-8XR 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B5673FH0-CF8 2GB
Samsung M393A1G40DB1-CRC 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB
Samsung M323R2GA3BB0-CQKOD 16GB
G Skill Intl F4-3000C16-16GISB 16GB
Crucial Technology CT25664BA160B.C16F 2GB
Kingston HP26D4S9D8MJ-16 16GB
Samsung M393B2G70BH0-CH9 16GB
Kingston KHX2666C16D4/32GX 32GB
Crucial Technology CT51264BA1339.D16F 4GB
Kingmax Semiconductor GSAF62F-D8---------- 4GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMT16GX4M2Z3200C16 8GB
Peak Electronics 256X64M-67E 2GB
Smart Modular SF4641G8CKHI6DFSDS 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Corsair CMW32GX4M2C3466C16 16GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-3600C18-32GTRS 32GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Samsung M471A2G43AB2-CWE 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Crucial Technology BLS4G4D26BFSE.8FBD2 4GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M47472K43DB1-CTD 16GB
报告一个错误
×
Bug description
Source link