AMD R538G1601U2S-UO 8GB vs Kingston KY7N41-MIE 8GB

总分

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

总分

Kingston KY7N41-MIE 8GB

Kingston KY7N41-MIE 8GB

差异规格评论

差异

AMD R538G1601U2S-UO 8GB

需要考虑的原因
AMD R538G1601U2S-UO 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 33

左右 21% 更低的延时

Kingston KY7N41-MIE 8GB

需要考虑的原因
Kingston KY7N41-MIE 8GB

报告一个错误

更快的读取速度，GB/s

16.2 14.2

测试中的平均数值
更快的写入速度，GB/s

12.4 10.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

AMD R538G1601U2S-UO 8GB

Kingston KY7N41-MIE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 33
读取速度，GB/s

14.2 16.2
写入速度，GB/s

10.0 12.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2634 2948

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Absolute Latency

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最新比较

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

G Skill Intl F4-4133C19-8GTZA 8GB

G Skill Intl F4-4133C19-8GTZA 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Kingston 9905734-061.A00G 32GB

Kingston 9905734-061.A00G 32GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

SK Hynix HMA82GU7AFR8N-UH 16GB

SK Hynix HMA82GU7AFR8N-UH 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology CT4G4SFS824A.C8FBD2 4GB

Crucial Technology CT4G4SFS824A.C8FBD2 4GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

G Skill Intl F4-3000C15-4GVRB 4GB

G Skill Intl F4-3000C15-4GVRB 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB

SK Hynix HMT451U7BFR8C-RD 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

Crucial Technology BL8G32C16U4W.8FE 8GB

Crucial Technology BL8G32C16U4W.8FE 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Crucial Technology CT16G4DFD8266.M16FJ 16GB

Crucial Technology CT16G4DFD8266.M16FJ 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

A-DATA Technology AM1P26KC8T1-BAAS 8GB

A-DATA Technology AM1P26KC8T1-BAAS 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Kingston RB24D4U7S8MB-8 8GB

Kingston RB24D4U7S8MB-8 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Patriot Memory (PDP Systems) 2666 C18 Series 16GB

Patriot Memory (PDP Systems) 2666 C18 Series 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

G Skill Intl F4-3200C15-16GTZR 16GB

G Skill Intl F4-3200C15-16GTZR 16GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Crucial Technology BLS8G4S240FSDK.8FD 8GB

Crucial Technology BLS8G4S240FSDK.8FD 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB