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AMD R5S38G1601U2S 8GB
Crucial Technology BL8G32C16U4R.M8FE 8GB

AMD R5S38G1601U2S 8GB vs Crucial Technology BL8G32C16U4R.M8FE 8GB

总分
star star star star star
AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

总分
star star star star star
Crucial Technology BL8G32C16U4R.M8FE 8GB

Crucial Technology BL8G32C16U4R.M8FE 8GB

差异 规格 评论

差异

AMD R5S38G1601U2S 8GB 需要考虑的原因
AMD R5S38G1601U2S 8GB
报告一个错误
Crucial Technology BL8G32C16U4R.M8FE 8GB 需要考虑的原因
Crucial Technology BL8G32C16U4R.M8FE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 37
    左右 -28% 更低的延时
  • 更快的读取速度，GB/s
    20.5 left arrow 15.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.9 left arrow 9.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
AMD R5S38G1601U2S 8GB
Crucial Technology BL8G32C16U4R.M8FE 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 29
  • 读取速度，GB/s
    15.4 left arrow 20.5
  • 写入速度，GB/s
    9.2 left arrow 15.9
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2581 left arrow 3587

AMD R5S38G1601U2S 8GB RAM的比较

Kingston KHX1866C9D3/8GX 8GB
AMD R538G1601U2S 8GB

Crucial Technology BL8G32C16U4R.M8FE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Ramaxel Technology RMUA5120ME86H9F-2666 4GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
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PUSKILL DDR3 1600 8G 8GB
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G Skill Intl F4-3600C19-16GVRB 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung V-GeN D4S8GL24A8 8GB
Samsung V-GeN D4S8GL24A8 8GB
内存RAM
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SK Hynix HYMP125S64CP8-S6 2GB
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Kingston K821PJ-MIB 16GB
内存RAM
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Crucial Technology BLE4G3D1608DE1TX0. 4GB
Kingston ACR26D4S9S1KA-4 4GB
Kingston ACR26D4S9S1KA-4 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Crucial Technology CT4G4DFS8213.C8FBD1 4GB
内存RAM
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Nanya Technology M2F4GH64CB8HB6N-CG 4GB
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Samsung M471A2K43DB1-CTD 16GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Corsair CMK128GX4M8A2133C13 16GB
内存RAM
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Micron Technology 18HTF12872AY-800F1 1GB
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Kingmax Semiconductor GLAF62F-D8---------- 4GB
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