AMD R5S38G1601U2S 8GB vs G Skill Intl F4-3600C19-16GVRB 16GB

总分

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

总分

G Skill Intl F4-3600C19-16GVRB 16GB

G Skill Intl F4-3600C19-16GVRB 16GB

差异规格评论

差异

AMD R5S38G1601U2S 8GB

需要考虑的原因
AMD R5S38G1601U2S 8GB

报告一个错误

G Skill Intl F4-3600C19-16GVRB 16GB

需要考虑的原因
G Skill Intl F4-3600C19-16GVRB 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 37

左右 -32% 更低的延时
更快的读取速度，GB/s

18.9 15.4

测试中的平均数值
更快的写入速度，GB/s

16.2 9.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R5S38G1601U2S 8GB

G Skill Intl F4-3600C19-16GVRB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 28
读取速度，GB/s

15.4 18.9
写入速度，GB/s

9.2 16.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2581 3835

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston ACR16D3LS1KBG/8G 8GB

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V-Color Technology Inc. TN48G26S819-SB 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Micron Technology 8ATF1G64AZ-2G3B1 8GB

Micron Technology 8ATF1G64AZ-2G3B1 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Crucial Technology CT4G4DFS824A.M8FB 4GB

Crucial Technology CT4G4DFS824A.M8FB 4GB

Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

Crucial Technology BLS8G4S26BFSD.16FBD2 8GB

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SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

A-DATA Technology AO1P32NC8T1-BCIS 8GB

A-DATA Technology AO1P32NC8T1-BCIS 8GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Corsair CMD16GX4M4B3000C14 4GB

Corsair CMD16GX4M4B3000C14 4GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMD32GX4M4B3600C16 8GB

Corsair CMD32GX4M4B3600C16 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

Samsung M471B1G73EB0-YK0 8GB

Samsung M471B1G73EB0-YK0 8GB

G Skill Intl F4-4266C19-8GTZA 8GB

G Skill Intl F4-4266C19-8GTZA 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Patriot Memory (PDP Systems) 3400 C16 Series 8GB

Patriot Memory (PDP Systems) 3400 C16 Series 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Samsung M378A4G43AB2-CWE 32GB

Samsung M378A4G43AB2-CWE 32GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Micron Technology 72ASS8G72LZ-2G6D2 64GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB