AMD R5S38G1601U2S 8GB vs Kingston 9965662-019.A00G 32GB

总分

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

总分

Kingston 9965662-019.A00G 32GB

Kingston 9965662-019.A00G 32GB

差异规格评论

差异

AMD R5S38G1601U2S 8GB

需要考虑的原因
AMD R5S38G1601U2S 8GB

报告一个错误

更快的读取速度，GB/s

15.4 9.2

测试中的平均数值
更快的写入速度，GB/s

9.2 8.7

测试中的平均数值

Kingston 9965662-019.A00G 32GB

需要考虑的原因
Kingston 9965662-019.A00G 32GB

报告一个错误

低于PassMark测试中的延时，ns

33 37

左右 -12% 更低的延时
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R5S38G1601U2S 8GB

Kingston 9965662-019.A00G 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 33
读取速度，GB/s

15.4 9.2
写入速度，GB/s

9.2 8.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2581 2175

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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SK Hynix HYMP112S64CP6-S6 1GB

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Crucial Technology CB8GU2400.C8D 8GB

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G Skill Intl F4-2400C16-16GFXR 16GB

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G Skill Intl F3-2666C12-8GTXD 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

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SK Hynix HMA41GU6AFR8N-TF 8GB

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SK Hynix HMAA2GS6AJR8N-XN 16GB

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Corsair CMWB8G1L2666A16W4 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Corsair CMR32GX4M2C3000C15 16GB

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Kingston 9965525-023.A00LF 4GB

Kingston 9965525-023.A00LF 4GB

Kingston 9965525-054.A00LF 4GB

Kingston 9965525-054.A00LF 4GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Teikon TMA851S6AFR6N-UHHC 4GB

Teikon TMA851S6AFR6N-UHHC 4GB

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Samsung M393B1K70CH0-YH9 8GB

Kllisre HMA81GU6AFR8N-VK 8GB

Kllisre HMA81GU6AFR8N-VK 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Panram International Corporation PUD42400C154G2NJK 4GB

Panram International Corporation PUD42400C154G2NJK 4GB