AMD R5S38G1601U2S 8GB vs Kingston KHX2800C14D4/4GX 4GB

总分

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

总分

Kingston KHX2800C14D4/4GX 4GB

Kingston KHX2800C14D4/4GX 4GB

差异规格评论

差异

AMD R5S38G1601U2S 8GB

需要考虑的原因
AMD R5S38G1601U2S 8GB

报告一个错误

Kingston KHX2800C14D4/4GX 4GB

需要考虑的原因
Kingston KHX2800C14D4/4GX 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 37

左右 -23% 更低的延时
更快的读取速度，GB/s

16.8 15.4

测试中的平均数值
更快的写入速度，GB/s

13.2 9.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R5S38G1601U2S 8GB

Kingston KHX2800C14D4/4GX 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 30
读取速度，GB/s

15.4 16.8
写入速度，GB/s

9.2 13.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 8 13 18 23 29 34 35 36 37 38
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2581 2996

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Crucial Technology BLS8G4D26BFSC.16FD2 8GB

Crucial Technology BLS8G4D26BFSC.16FD2 8GB

PNY Electronics 4GBH2X02E99927-16 4GB

PNY Electronics 4GBH2X02E99927-16 4GB

Corsair CMK64GX4M4B3466C16 16GB

Corsair CMK64GX4M4B3466C16 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Kingston X3XCFP-HYA 8GB

Kingston X3XCFP-HYA 8GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT8G4SFD8213.C16FBD2 8GB

Crucial Technology CT8G4SFD8213.C16FBD2 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Samsung M471A2K43CB1-CRCR 16GB

Samsung M471A2K43CB1-CRCR 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

V-Color Technology Inc. TN416G26D819-SB 16GB

V-Color Technology Inc. TN416G26D819-SB 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

Unifosa Corporation GU502203EP0201 1GB

Unifosa Corporation GU502203EP0201 1GB

Patriot Memory (PDP Systems) 3200 C16 Series 8GB

Patriot Memory (PDP Systems) 3200 C16 Series 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

G Skill Intl F4-3000C15-4GVR 4GB

G Skill Intl F4-3000C15-4GVR 4GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Chun Well Technology Holding Limited D4U0836181B 8GB

Chun Well Technology Holding Limited D4U0836181B 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Netac Technology Co Ltd E40832A 8GB

Netac Technology Co Ltd E40832A 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

G Skill Intl F4-4000C18-16GTRS 16GB

G Skill Intl F4-4000C18-16GTRS 16GB