AMD R5S38G1601U2S 8GB vs Micron Technology 8ATF51264AZ-2G1A1 4GB

总分

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

总分

Micron Technology 8ATF51264AZ-2G1A1 4GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

差异规格评论

差异

AMD R5S38G1601U2S 8GB

需要考虑的原因
AMD R5S38G1601U2S 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 43

左右 14% 更低的延时
更快的读取速度，GB/s

15.4 12.2

测试中的平均数值

Micron Technology 8ATF51264AZ-2G1A1 4GB

需要考虑的原因
Micron Technology 8ATF51264AZ-2G1A1 4GB

报告一个错误

更快的写入速度，GB/s

9.7 9.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R5S38G1601U2S 8GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 43
读取速度，GB/s

15.4 12.2
写入速度，GB/s

9.2 9.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2581 2501

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung 1600 CL10 Series 8GB

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Kingmax Semiconductor GSJF62F-DA---------- 4GB

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AMD R5S38G1601U2S 8GB

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Micron Technology 8ATF51264AZ-2G1A1 4GB

Corsair CMZ16GX3M2A2400C10 8GB

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V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB

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PNY Electronics PNY 2GB

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Kingston 9905403-174.A00LF 2GB

Kingston 9905403-174.A00LF 2GB

Crucial Technology BL16G36C16U4BL.M8FB1 16GB

Crucial Technology BL16G36C16U4BL.M8FB1 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Kingston 9965684-005.A00G 8GB

Kingston 9965684-005.A00G 8GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

G Skill Intl F4-4000C18-16GTZR 16GB

G Skill Intl F4-4000C18-16GTZR 16GB