AMD R5S38G1601U2S 8GB vs Mushkin MR[A/B]4U320LLLM16G 16GB

总分

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

总分

Mushkin MR[A/B]4U320LLLM16G 16GB

Mushkin MR[A/B]4U320LLLM16G 16GB

差异规格评论

差异

AMD R5S38G1601U2S 8GB

需要考虑的原因
AMD R5S38G1601U2S 8GB

报告一个错误

Mushkin MR[A/B]4U320LLLM16G 16GB

需要考虑的原因
Mushkin MR[A/B]4U320LLLM16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

20 37

左右 -85% 更低的延时
更快的读取速度，GB/s

20 15.4

测试中的平均数值
更快的写入速度，GB/s

15.0 9.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R5S38G1601U2S 8GB

Mushkin MR[A/B]4U320LLLM16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 20
读取速度，GB/s

15.4 20.0
写入速度，GB/s

9.2 15.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2581 3619

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

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Crucial Technology CT4G4DFS824A.M8FE 4GB

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Crucial Technology CT102464BF160B-16F 8GB

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SK Hynix HMT41GS6AFR8A-PB 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Samsung M378A1G43DB0-CPB 8GB

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Samsung M471A5244BB0-CRC 4GB

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Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

Kingston 9905678-027.A00G 8GB

Kingston 9905678-027.A00G 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Micron Technology 4ATF51264HZ-2G3B2 4GB

Micron Technology 4ATF51264HZ-2G3B2 4GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Crucial Technology CT4G4SFS824A.C8FE 4GB

Crucial Technology CT4G4SFS824A.C8FE 4GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Kingston XWM8G1-MIE 32GB

Kingston XWM8G1-MIE 32GB