RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
AMD R5S38G1601U2S 8GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
比较
AMD R5S38G1601U2S 8GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
总分
AMD R5S38G1601U2S 8GB
总分
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
差异
规格
评论
差异
需要考虑的原因
AMD R5S38G1601U2S 8GB
报告一个错误
低于PassMark测试中的延时,ns
37
71
左右 48% 更低的延时
更快的写入速度,GB/s
9.2
6.4
测试中的平均数值
需要考虑的原因
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
报告一个错误
更快的读取速度,GB/s
15.6
15.4
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
AMD R5S38G1601U2S 8GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
37
71
读取速度,GB/s
15.4
15.6
写入速度,GB/s
9.2
6.4
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2581
1650
AMD R5S38G1601U2S 8GB RAM的比较
Kingston KHX1866C9D3/8GX 8GB
AMD R538G1601U2S 8GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB RAM的比较
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
Samsung M3 78T2863EHS-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N
Kingston 9965525-140.A00LF 8GB
Kingston 99U5700-014.A00G 8GB
Kingston 9965525-155.A00LF 8GB
Kingston 9905744-023.A00G 16GB
Kingston HP32D4U8S8HC-8X 8GB
Corsair CMK16GX4M2B3200C16 8GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-2133C15-8GRR2 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4DFD832A.M16FJ 16GB
Samsung M4 70T5663RZ3-CF7 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N
A-DATA Technology DOVF1B163G2G 2GB
Corsair CMK64GX4M2A2666C16 32GB
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB
Crucial Technology CT102464BA160B.M16 8GB
Corsair CMK16GX4M4C3200C15 4GB
Kingston 9905403-174.A00LF 2GB
G Skill Intl F4-3000C15-4GVRB 4GB
Kingston KP223C-ELD 2GB
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB
A-DATA Technology DQVE1908 512MB
Kingston 8ATF1G64AZ-2G1B1 8GB
报告一个错误
×
Bug description
Source link