Apacer Technology 78.01G86.9H50C 1GB vs Panram International Corporation M424016 4GB

总分

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

总分

Panram International Corporation M424016 4GB

Panram International Corporation M424016 4GB

差异规格评论

差异

Apacer Technology 78.01G86.9H50C 1GB

需要考虑的原因
Apacer Technology 78.01G86.9H50C 1GB

报告一个错误

更快的读取速度，GB/s

2 12.6

测试中的平均数值

Panram International Corporation M424016 4GB

需要考虑的原因
Panram International Corporation M424016 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 54

左右 -74% 更低的延时
更快的写入速度，GB/s

9.9 1,131.7

测试中的平均数值
更高的内存带宽，mbps

19200 4200

左右 4.57 更高的带宽

规格

完整的技术规格清单

Apacer Technology 78.01G86.9H50C 1GB

Panram International Corporation M424016 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 31
读取速度，GB/s

2,710.2 12.6
写入速度，GB/s

1,131.7 9.9
内存带宽，mbps

4200 19200

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

4-4-4-12 / 533 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

399 2035

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

A-DATA Technology AM1P26KC8T1-BAAS 8GB

A-DATA Technology AM1P26KC8T1-BAAS 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

G Skill Intl F4-3200C16-16GVS 16GB

G Skill Intl F4-3200C16-16GVS 16GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Transcend Information TS2GSH64V1B 16GB

Transcend Information TS2GSH64V1B 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

ADVAN Inc AM42E28UD04T-NVL 4GB

ADVAN Inc AM42E28UD04T-NVL 4GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Panram International Corporation M424016 4GB

Panram International Corporation M424016 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Patriot Memory (PDP Systems) 3600 C14 Series 8GB

Patriot Memory (PDP Systems) 3600 C14 Series 8GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

Crucial Technology CT4G4DFS8213.C8FAD1 4GB

Crucial Technology CT4G4DFS8213.C8FAD1 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-3000C14-8GVK 8GB

G Skill Intl F4-3000C14-8GVK 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

G Skill Intl F4-3300C16-16GTZKW 16GB

G Skill Intl F4-3300C16-16GTZKW 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Corsair CMK16GX4M2D3600C18 8GB

Corsair CMK16GX4M2D3600C18 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Samsung SF4641G8CKHI6DFSDS 8GB

Samsung SF4641G8CKHI6DFSDS 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB

V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Crucial Technology BL16G36C16U4W.M8FB1 16GB

Crucial Technology BL16G36C16U4W.M8FB1 16GB