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Apacer Technology 78.B1GET.AU00C 4GB
G Skill Intl F4-2800C15-4GTZ 4GB

Apacer Technology 78.B1GET.AU00C 4GB vs G Skill Intl F4-2800C15-4GTZ 4GB

总分
star star star star star
Apacer Technology 78.B1GET.AU00C 4GB

Apacer Technology 78.B1GET.AU00C 4GB

总分
star star star star star
G Skill Intl F4-2800C15-4GTZ 4GB

G Skill Intl F4-2800C15-4GTZ 4GB

差异 规格 评论

差异

Apacer Technology 78.B1GET.AU00C 4GB 需要考虑的原因
Apacer Technology 78.B1GET.AU00C 4GB
报告一个错误
G Skill Intl F4-2800C15-4GTZ 4GB 需要考虑的原因
G Skill Intl F4-2800C15-4GTZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 24
    左右 -14% 更低的延时
  • 更快的读取速度，GB/s
    18 left arrow 16.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 8.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Apacer Technology 78.B1GET.AU00C 4GB
G Skill Intl F4-2800C15-4GTZ 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 21
  • 读取速度，GB/s
    16.1 left arrow 18.0
  • 写入速度，GB/s
    8.7 left arrow 13.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2562 left arrow 2769

Apacer Technology 78.B1GET.AU00C 4GB RAM的比较

Apacer Technology 78.C1GET.CP10C 8GB
Kingston ACR16D3LS1KFG/4G 4GB

G Skill Intl F4-2800C15-4GTZ 4GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Apacer Technology 78.B1GET.AU00C 4GB
Apacer Technology 78.B1GET.AU00C 4GB
G Skill Intl F4-2800C15-4GTZ 4GB
G Skill Intl F4-2800C15-4GTZ 4GB
内存RAM
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-3200C16-16GVR 16GB
G Skill Intl F4-3200C16-16GVR 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Essencore Limited KD4AGU88C-26N1900 16GB
Essencore Limited KD4AGU88C-26N1900 16GB
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Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
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Corsair CMV16GX4M1L2400C16 16GB
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Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
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Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
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Apacer Technology 78.CAGR4.40C0B 8GB
内存RAM
Qimonda 72T128420EFA3SB2 1GB
Qimonda 72T128420EFA3SB2 1GB
Micron Technology TEAMGROUP-UD4-3000 16GB
Micron Technology TEAMGROUP-UD4-3000 16GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Kingston HP26D4U9S8MD-8 8GB
Kingston HP26D4U9S8MD-8 8GB
内存RAM
SK Hynix HMT451S6DFR8A-PB 4GB
SK Hynix HMT451S6DFR8A-PB 4GB
Crucial Technology CT8G4DFS8266.C8FE 8GB
Crucial Technology CT8G4DFS8266.C8FE 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Kingston SMD4-S8G48HJ-26V 8GB
Kingston SMD4-S8G48HJ-26V 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CMZ16GX3M4X1866C9 4GB
Corsair CMZ16GX3M4X1866C9 4GB
内存RAM