Apacer Technology 78.C1GET.9K10C 8GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

总分

Apacer Technology 78.C1GET.9K10C 8GB

Apacer Technology 78.C1GET.9K10C 8GB

总分

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

差异规格评论

差异

Apacer Technology 78.C1GET.9K10C 8GB

需要考虑的原因
Apacer Technology 78.C1GET.9K10C 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 31

左右 16% 更低的延时

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

需要考虑的原因
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

报告一个错误

更快的读取速度，GB/s

20.5 10.5

测试中的平均数值
更快的写入速度，GB/s

15.5 6.1

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Apacer Technology 78.C1GET.9K10C 8GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 31
读取速度，GB/s

10.5 20.5
写入速度，GB/s

6.1 15.5
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1899 3649

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMT32GX4M4C3000C15 8GB

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Apacer Technology 78.C1GET.9K10C 8GB

Apacer Technology 78.C1GET.9K10C 8GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

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Samsung M393B1G70BH0-YK0 8GB

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Apacer Technology 78.CAGMR.40C0B 8GB

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PNY Electronics PNY 2GB

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Micron Technology 8ATF1G64HZ-2G3E1 8GB

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SK Hynix HYMP512U64CP8-Y5 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

Corsair CMK16GX4M2E3200C16 8GB

Corsair CMK16GX4M2E3200C16 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Corsair CMK16GX4M2A2666C16 8GB

Corsair CMK16GX4M2A2666C16 8GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB