Asgard VMA45UG-MEC1U2AW1 8GB vs Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

总分

Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

总分

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

差异规格评论

差异

Asgard VMA45UG-MEC1U2AW1 8GB

需要考虑的原因
Asgard VMA45UG-MEC1U2AW1 8GB

报告一个错误

更快的写入速度，GB/s

9.2 8.5

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 47

左右 -47% 更低的延时
更快的读取速度，GB/s

12.1 11.8

测试中的平均数值

规格

完整的技术规格清单

Asgard VMA45UG-MEC1U2AW1 8GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

47 32
读取速度，GB/s

11.8 12.1
写入速度，GB/s

9.2 8.5
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 12 14 15 16
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2323 2478

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393B1K70CH0-CH9 8GB

Kingston 9905663-005.A00G 16GB

Kingston 9905663-005.A00G 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Gloway International (HK) STK4U2133D15081C 8GB

Gloway International (HK) STK4U2133D15081C 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Smart Modular SF4641G8CK8I8HLSBG 8GB

Smart Modular SF4641G8CK8I8HLSBG 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Micron Technology 18ASF1G72PZ-2G1AV 8GB

Micron Technology 18ASF1G72PZ-2G1AV 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

G Skill Intl F4-4133C19-4GTZ 4GB

G Skill Intl F4-4133C19-4GTZ 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Panram International Corporation M424016 4GB

Panram International Corporation M424016 4GB

Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G

Crucial Technology CT102464BD160B.M16 8GB

Crucial Technology CT102464BD160B.M16 8GB

A-DATA Technology DDR4 2666 2OZ 4GB

A-DATA Technology DDR4 2666 2OZ 4GB

Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

Crucial Technology CT8G4SFD824AC16FBD1 8GB

Crucial Technology CT8G4SFD824AC16FBD1 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Team Group Inc. TEAMGROUP-UD4-4500 8GB

Team Group Inc. TEAMGROUP-UD4-4500 8GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Kingston 9965589-033.D00G 8GB

Kingston 9965589-033.D00G 8GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB

SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

Crucial Technology CT16G4S24AM.M16FE 16GB

Crucial Technology CT16G4S24AM.M16FE 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 16ATF2G64HZ-2G3A1 16GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB