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Asgard VMA45UG-MEC1U2AW1 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
比较
Asgard VMA45UG-MEC1U2AW1 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
总分
Asgard VMA45UG-MEC1U2AW1 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
差异
规格
评论
差异
需要考虑的原因
Asgard VMA45UG-MEC1U2AW1 8GB
报告一个错误
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
报告一个错误
低于PassMark测试中的延时,ns
29
47
左右 -62% 更低的延时
更快的读取速度,GB/s
12.2
11.8
测试中的平均数值
更快的写入速度,GB/s
9.6
9.2
测试中的平均数值
规格
完整的技术规格清单
Asgard VMA45UG-MEC1U2AW1 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
47
29
读取速度,GB/s
11.8
12.2
写入速度,GB/s
9.2
9.6
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2323
2443
Asgard VMA45UG-MEC1U2AW1 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB RAM的比较
Samsung M393B1G70BH0-CK0 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Asgard VMA45UG-MEC1U2AW1 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N
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TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
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Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology CT8G4SFS8266.C8FN 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Corsair CMK64GX4M8A2133C13 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB
报告一个错误
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