Asgard VMA45UG-MEC1U2AW1 8GB vs Micron Technology 8ATF51264HZ-2G1B1 4GB

总分

Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

总分

Micron Technology 8ATF51264HZ-2G1B1 4GB

Micron Technology 8ATF51264HZ-2G1B1 4GB

差异规格评论

差异

Asgard VMA45UG-MEC1U2AW1 8GB

需要考虑的原因
Asgard VMA45UG-MEC1U2AW1 8GB

报告一个错误

更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

Micron Technology 8ATF51264HZ-2G1B1 4GB

需要考虑的原因
Micron Technology 8ATF51264HZ-2G1B1 4GB

报告一个错误

低于PassMark测试中的延时，ns

34 47

左右 -38% 更低的延时
更快的读取速度，GB/s

14.3 11.8

测试中的平均数值
更快的写入速度，GB/s

10.9 9.2

测试中的平均数值

规格

完整的技术规格清单

Asgard VMA45UG-MEC1U2AW1 8GB

Micron Technology 8ATF51264HZ-2G1B1 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

47 34
读取速度，GB/s

11.8 14.3
写入速度，GB/s

9.2 10.9
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2323 2201

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX1600C9D3/4G 4GB

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G Skill Intl F4-4000C17-8GTRS 8GB

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Kingston 9905711-035.A00G 8GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

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Transcend Information TS2GSH64V4B 16GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

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SK Hynix HMA82GR7JJR8N-VK 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Corsair CM4B8G1J2400A16K2-O 8GB

Corsair CM4B8G1J2400A16K2-O 8GB