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Asgard VMA45UG-MEC1U2AW1 8GB
Micron Technology AFLD416EH1P 16GB

Asgard VMA45UG-MEC1U2AW1 8GB vs Micron Technology AFLD416EH1P 16GB

总分
star star star star star
Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

总分
star star star star star
Micron Technology AFLD416EH1P 16GB

Micron Technology AFLD416EH1P 16GB

差异 规格 评论

差异

Asgard VMA45UG-MEC1U2AW1 8GB 需要考虑的原因
Asgard VMA45UG-MEC1U2AW1 8GB
报告一个错误
  • 更快的写入速度，GB/s
    9.2 left arrow 6.9
    测试中的平均数值
Micron Technology AFLD416EH1P 16GB 需要考虑的原因
Micron Technology AFLD416EH1P 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 47
    左右 -68% 更低的延时
  • 更快的读取速度，GB/s
    13.7 left arrow 11.8
    测试中的平均数值

规格

完整的技术规格清单
Asgard VMA45UG-MEC1U2AW1 8GB
Micron Technology AFLD416EH1P 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 28
  • 读取速度，GB/s
    11.8 left arrow 13.7
  • 写入速度，GB/s
    9.2 left arrow 6.9
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2323 left arrow 2312

Asgard VMA45UG-MEC1U2AW1 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology AFLD416EH1P 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Asgard VMA45UG-MEC1U2AW1 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Micron Technology AFLD416EH1P 16GB
Micron Technology AFLD416EH1P 16GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Corsair CMK4GX4M1D2400C14 4GB
Corsair CMK4GX4M1D2400C14 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
A-DATA Technology AO1P24HC4N2-BYNS 4GB
A-DATA Technology AO1P24HC4N2-BYNS 4GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
内存RAM
Kingston KHX1600C9S3L/8G 8GB
Kingston KHX1600C9S3L/8G 8GB
Micron Technology 36ASF4G72PZ-2G3A1 32GB
Micron Technology 36ASF4G72PZ-2G3A1 32GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Smart Modular SF4641G8CK8IWGKSEG 8GB
Smart Modular SF4641G8CK8IWGKSEG 8GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
内存RAM
Kingston 99U5584-010.A00LF 4GB
Kingston 99U5584-010.A00LF 4GB
Panram International Corporation PUD42400C168GVS 8GB
Panram International Corporation PUD42400C168GVS 8GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Kingston KCRXJ6-MIE 16GB
Kingston KCRXJ6-MIE 16GB
内存RAM
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Micron Technology AFLD48VH1P 8GB
Micron Technology AFLD48VH1P 8GB
内存RAM
Kingston 99U5474-022.A00LF 2GB
Kingston 99U5474-022.A00LF 2GB
Samsung M471A2G43BB2-CWE 16GB
Samsung M471A2G43BB2-CWE 16GB
内存RAM