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ASint Technology SLA304G08-GGNHM 4GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB

ASint Technology SLA304G08-GGNHM 4GB vs Micron Technology 18ASF2G72AZ-2G1B1 16GB

总分
star star star star star
ASint Technology SLA304G08-GGNHM 4GB

ASint Technology SLA304G08-GGNHM 4GB

总分
star star star star star
Micron Technology 18ASF2G72AZ-2G1B1 16GB

Micron Technology 18ASF2G72AZ-2G1B1 16GB

差异 规格 评论

差异

ASint Technology SLA304G08-GGNHM 4GB 需要考虑的原因
ASint Technology SLA304G08-GGNHM 4GB
报告一个错误
Micron Technology 18ASF2G72AZ-2G1B1 16GB 需要考虑的原因
Micron Technology 18ASF2G72AZ-2G1B1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 30
    左右 -3% 更低的延时
  • 更快的读取速度，GB/s
    14.2 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.9 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
ASint Technology SLA304G08-GGNHM 4GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 29
  • 读取速度，GB/s
    12.3 left arrow 14.2
  • 写入速度，GB/s
    7.2 left arrow 8.9
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2005 left arrow 2909

ASint Technology SLA304G08-GGNHM 4GB RAM的比较

Kingston KVT8FP-HYC 4GB

Micron Technology 18ASF2G72AZ-2G1B1 16GB RAM的比较

Kingston 9905403-156.A00LF 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
ASint Technology SLA304G08-GGNHM 4GB
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Micron Technology 18ASF2G72AZ-2G1B1 16GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB
内存RAM
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内存RAM
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内存RAM
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