Avant Technology F641GU67F9333G 8GB vs Corsair CMD32GX4M4B3866C18 8GB

总分

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

总分

Corsair CMD32GX4M4B3866C18 8GB

Corsair CMD32GX4M4B3866C18 8GB

差异规格评论

差异

Avant Technology F641GU67F9333G 8GB

需要考虑的原因
Avant Technology F641GU67F9333G 8GB

报告一个错误

Corsair CMD32GX4M4B3866C18 8GB

需要考虑的原因
Corsair CMD32GX4M4B3866C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 28

左右 -56% 更低的延时
更快的读取速度，GB/s

21.1 11.1

测试中的平均数值
更快的写入速度，GB/s

16.9 6.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Avant Technology F641GU67F9333G 8GB

Corsair CMD32GX4M4B3866C18 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 18
读取速度，GB/s

11.1 21.1
写入速度，GB/s

6.5 16.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2113 3971

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A1G44BB0-CWE 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Crucial Technology BLS4G4S26BFSD.8FBD2 4GB

Kingston 9905403-174.A00LF 2GB

Kingston 9905403-174.A00LF 2GB

Crucial Technology BLS8G4D240FSA.16FBD 8GB

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SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

Samsung M471A1K43EB1-CWE 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Hypertec G2RT-4AFT00 16GB