Avant Technology F641GU67F9333G 8GB vs Crucial Technology BL8G26C16S4B.8FD 8GB

总分

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

总分

Crucial Technology BL8G26C16S4B.8FD 8GB

Crucial Technology BL8G26C16S4B.8FD 8GB

差异规格评论

差异

Avant Technology F641GU67F9333G 8GB

需要考虑的原因
Avant Technology F641GU67F9333G 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 31

左右 10% 更低的延时

Crucial Technology BL8G26C16S4B.8FD 8GB

需要考虑的原因
Crucial Technology BL8G26C16S4B.8FD 8GB

报告一个错误

更快的读取速度，GB/s

16.3 11.1

测试中的平均数值
更快的写入速度，GB/s

12.9 6.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Avant Technology F641GU67F9333G 8GB

Crucial Technology BL8G26C16S4B.8FD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 31
读取速度，GB/s

11.1 16.3
写入速度，GB/s

6.5 12.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2113 3120

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Smart Modular SF4642G8CK8I8HLSBG 16GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB

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Samsung M378B5673EH1-CF8 2GB

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Crucial Technology BLS16G4D26BFST.16FD 16GB

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Corsair CMK8GX4M2B3200C16 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

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Crucial Technology CT8G4DFD8213.C16FBD2 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

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Kingston 9905678-007.A00G 8GB

Kingston 9905678-007.A00G 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Kingston KTP9W1-MID 16GB

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Kingston 9965525-018.A00LF 4GB

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Corsair CM4X16GE2666Z16K4 16GB

Corsair CM4X16GE2666Z16K4 16GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Crucial Technology BL8G32C16U4BL.8FE 8GB

Crucial Technology BL8G32C16U4BL.8FE 8GB