Avant Technology F641GU67F9333G 8GB vs Micron Technology 16ATF2G64AZ-2G1B1 16GB

总分

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

总分

Micron Technology 16ATF2G64AZ-2G1B1 16GB

Micron Technology 16ATF2G64AZ-2G1B1 16GB

差异规格评论

差异

Avant Technology F641GU67F9333G 8GB

需要考虑的原因
Avant Technology F641GU67F9333G 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 31

左右 10% 更低的延时

Micron Technology 16ATF2G64AZ-2G1B1 16GB

需要考虑的原因
Micron Technology 16ATF2G64AZ-2G1B1 16GB

报告一个错误

更快的读取速度，GB/s

14.1 11.1

测试中的平均数值
更快的写入速度，GB/s

9.0 6.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Avant Technology F641GU67F9333G 8GB

Micron Technology 16ATF2G64AZ-2G1B1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 31
读取速度，GB/s

11.1 14.1
写入速度，GB/s

6.5 9.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2113 2640

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3000C16-8GTZN 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Micron Technology 16ATF2G64AZ-2G1B1 16GB

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SK Hynix HMA42GR7AFR4N-UH 16GB

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GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Kingston KVT8FP-HYC 4GB

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Gold Key Technology Co Ltd NMUD480E84-3000D 8GB

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Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Micron Technology 36ASF4G72PZ-2G6D1 32GB

Micron Technology 36ASF4G72PZ-2G6D1 32GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

Kingston 9905702-150.A00G 8GB

Kingston 9905702-150.A00G 8GB

Team Group Inc. Team-Value-800 2GB

Team Group Inc. Team-Value-800 2GB

Corsair CMW32GX4M4C3200C14 8GB

Corsair CMW32GX4M4C3200C14 8GB

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Corsair CMH32GX4M4D3600C18 8GB

Corsair CMH32GX4M4D3600C18 8GB