Corsair CM2X1024-6400C4 1GB vs Golden Empire CL15-15-15 D4-2400 4GB

总分

Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

总分

Golden Empire CL15-15-15 D4-2400 4GB

Golden Empire CL15-15-15 D4-2400 4GB

差异规格评论

差异

Corsair CM2X1024-6400C4 1GB

需要考虑的原因
Corsair CM2X1024-6400C4 1GB

报告一个错误

更快的读取速度，GB/s

4 16.6

测试中的平均数值

Golden Empire CL15-15-15 D4-2400 4GB

需要考虑的原因
Golden Empire CL15-15-15 D4-2400 4GB

报告一个错误

低于PassMark测试中的延时，ns

32 54

左右 -69% 更低的延时
更快的写入速度，GB/s

12.0 1,973.5

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Corsair CM2X1024-6400C4 1GB

Golden Empire CL15-15-15 D4-2400 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 32
读取速度，GB/s

4,967.4 16.6
写入速度，GB/s

1,973.5 12.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

776 2952

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMX4GX3M2A1600C9 2GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

Crucial Technology CT25664BA1339.M8FK 2GB

Crucial Technology CT25664BA1339.M8FK 2GB

Kingston 9905625-142.A00G 16GB

Kingston 9905625-142.A00G 16GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Corsair CMD32GX4M4B3866C18 8GB

Corsair CMD32GX4M4B3866C18 8GB

Samsung M378B5273DH0-CH9 4GB

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Kingston HP37D4U1S8ME-16XR 16GB

Kingston HP37D4U1S8ME-16XR 16GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Dust Leopard DDR4-2400 C16 8GB 8GB

Dust Leopard DDR4-2400 C16 8GB 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Micron Technology 8ATF51264HZ-2G1A2 4GB

Micron Technology 8ATF51264HZ-2G1A2 4GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Kllisre M378A5143EB2-CRC 4GB

Kllisre M378A5143EB2-CRC 4GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

V-Color Technology Inc. TA48G30S815G 8GB

V-Color Technology Inc. TA48G30S815G 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 16ATF4G64HZ-3G2E2 32GB

Micron Technology 16ATF4G64HZ-3G2E2 32GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

SK Hynix HMA82GR7AFR4N-VK 16GB

SK Hynix HMA82GR7AFR4N-VK 16GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

Patriot Memory (PDP Systems) PSD432G32002 32GB

Patriot Memory (PDP Systems) PSD432G32002 32GB

Samsung M393B1G73QH0-CMA 8GB

Samsung M393B1G73QH0-CMA 8GB

Chun Well Technology Holding Limited D4U0826190B 8GB

Chun Well Technology Holding Limited D4U0826190B 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

G Skill Intl F4-3200C14-8GTZN 8GB

G Skill Intl F4-3200C14-8GTZN 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB