Corsair CM2X1024-6400C4 1GB vs Micron Technology 8ATF1G64HZ-2G6E1 8GB

总分

Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

总分

Micron Technology 8ATF1G64HZ-2G6E1 8GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

差异规格评论

差异

Corsair CM2X1024-6400C4 1GB

需要考虑的原因
Corsair CM2X1024-6400C4 1GB

报告一个错误

更快的读取速度，GB/s

4 15

测试中的平均数值

Micron Technology 8ATF1G64HZ-2G6E1 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-2G6E1 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 54

左右 -50% 更低的延时
更快的写入速度，GB/s

11.5 1,973.5

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Corsair CM2X1024-6400C4 1GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 36
读取速度，GB/s

4,967.4 15.0
写入速度，GB/s

1,973.5 11.5
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

776 2664

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

AMD R534G1601U1S 4GB

AMD R534G1601U1S 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Samsung M378A4G43AB2-CWE 32GB

Samsung M378A4G43AB2-CWE 32GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Corsair CMK16GX4M4C3000C16 4GB

Corsair CMK16GX4M4C3000C16 4GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Cortus SAS 8ATF51264AZ-2G1A1 4GB

Cortus SAS 8ATF51264AZ-2G1A1 4GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

G Skill Intl F4-3200C14-32GVK 32GB

G Skill Intl F4-3200C14-32GVK 32GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Panram International Corporation PUD42400C154G2NJW 4GB

Panram International Corporation PUD42400C154G2NJW 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology DDR4 4133 8GB

A-DATA Technology DDR4 4133 8GB

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

G Skill Intl F4-4133C19-4GTZ 4GB

G Skill Intl F4-4133C19-4GTZ 4GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

G Skill Intl F4-3600C17-8GTRG 8GB

G Skill Intl F4-3600C17-8GTRG 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905678-042.A00G 8GB

Kingston 9905678-042.A00G 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Smart Modular SF4641G8CKHI6DFSDS 8GB

Smart Modular SF4641G8CKHI6DFSDS 8GB

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

Panram International Corporation PUD43000C168G2NJR 8GB

Panram International Corporation PUD43000C168G2NJR 8GB