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Corsair CM2X1024-6400C4 1GB
Samsung M393A2K40CB2-CTD 16GB

Corsair CM2X1024-6400C4 1GB vs Samsung M393A2K40CB2-CTD 16GB

总分
star star star star star
Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

总分
star star star star star
Samsung M393A2K40CB2-CTD 16GB

Samsung M393A2K40CB2-CTD 16GB

差异 规格 评论

差异

Corsair CM2X1024-6400C4 1GB 需要考虑的原因
Corsair CM2X1024-6400C4 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 10
    测试中的平均数值
Samsung M393A2K40CB2-CTD 16GB 需要考虑的原因
Samsung M393A2K40CB2-CTD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    52 left arrow 54
    左右 -4% 更低的延时
  • 更快的写入速度，GB/s
    7.3 left arrow 1,973.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Corsair CM2X1024-6400C4 1GB
Samsung M393A2K40CB2-CTD 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 52
  • 读取速度，GB/s
    4,967.4 left arrow 10.0
  • 写入速度，GB/s
    1,973.5 left arrow 7.3
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    776 left arrow 2306

Corsair CM2X1024-6400C4 1GB RAM的比较

Kingston KHX6400D2LL/1GN 1GB
V-GEN D4H4GL26A8TS5 4GB

Samsung M393A2K40CB2-CTD 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Corsair CM2X1024-6400C4 1GB
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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内存RAM
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内存RAM
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