Corsair CM2X1024-6400C4 1GB vs Teclast TLD416G26A30 16GB

总分

Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

总分

Teclast TLD416G26A30 16GB

Teclast TLD416G26A30 16GB

差异规格评论

差异

Corsair CM2X1024-6400C4 1GB

需要考虑的原因
Corsair CM2X1024-6400C4 1GB

报告一个错误

更快的读取速度，GB/s

4 15.9

测试中的平均数值

Teclast TLD416G26A30 16GB

需要考虑的原因
Teclast TLD416G26A30 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 54

左右 -50% 更低的延时
更快的写入速度，GB/s

13.1 1,973.5

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Corsair CM2X1024-6400C4 1GB

Teclast TLD416G26A30 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 36
读取速度，GB/s

4,967.4 15.9
写入速度，GB/s

1,973.5 13.1
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

776 2719

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A5244CB0-CWE 4GB

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Corsair CMD16GX3M2A1866C9 8GB

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Kingston CBD32D4S2D8HD-16 16GB

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Kingston KHX2800C14D4/8GX 8GB

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Crucial Technology BLS4G4D240FSA.8FARG 4GB

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Kingston 9905471-002.A00LF 2GB

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Corsair CMK4GX4M1A2400C16 4GB

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TwinMOS 8DHE3MN8-HATP 2GB

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V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB

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AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Crucial Technology BL16G36C16U4W.M8FB1 16GB

Crucial Technology BL16G36C16U4W.M8FB1 16GB

Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

Teclast TLD416G26A30 16GB

Teclast TLD416G26A30 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

SK Hynix HMA851U6JJR6N-VK 4GB

SK Hynix HMA851U6JJR6N-VK 4GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

A-DATA Technology AM2P24HC4R1-BUPS 4GB

A-DATA Technology AM2P24HC4R1-BUPS 4GB

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G Skill Intl F4-2133C15-8GRR 8GB