Corsair CM2X2048-6400C5 2GB vs Corsair CM4X4GF2666C16K4 4GB

总分

Corsair CM2X2048-6400C5 2GB

Corsair CM2X2048-6400C5 2GB

总分

Corsair CM4X4GF2666C16K4 4GB

Corsair CM4X4GF2666C16K4 4GB

差异规格评论

差异

Corsair CM2X2048-6400C5 2GB

需要考虑的原因
Corsair CM2X2048-6400C5 2GB

报告一个错误

更快的读取速度，GB/s

5 15.3

测试中的平均数值
更快的写入速度，GB/s

2,549.9 10.7

测试中的平均数值

Corsair CM4X4GF2666C16K4 4GB

需要考虑的原因
Corsair CM4X4GF2666C16K4 4GB

报告一个错误

低于PassMark测试中的延时，ns

34 53

左右 -56% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Corsair CM2X2048-6400C5 2GB

Corsair CM4X4GF2666C16K4 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 34
读取速度，GB/s

5,481.3 15.3
写入速度，GB/s

2,549.9 10.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1026 2796

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Corsair CM2X2048-6400C5 2GB

Corsair CM2X2048-6400C5 2GB

Corsair CM4X4GF2666C16K4 4GB

Corsair CM4X4GF2666C16K4 4GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Gloway International (HK) STK2133C15-8GB 8GB

Gloway International (HK) STK2133C15-8GB 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Crucial Technology CT4G4DFS8213.C8FHP 4GB

Crucial Technology CT4G4DFS8213.C8FHP 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N

Apacer Technology 78.CAGPN.DF40B 8GB

Apacer Technology 78.CAGPN.DF40B 8GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Smart Modular SMU4WEC8C1K0464FCG 8GB

Smart Modular SMU4WEC8C1K0464FCG 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Kingston 9965643-002.A01G 4GB

Kingston 9965643-002.A01G 4GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-3200C15-16GTZSW 16GB

G Skill Intl F4-3200C15-16GTZSW 16GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Team Group Inc. ECC-DDR3-1600 4GB

Team Group Inc. ECC-DDR3-1600 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Kingston 9905599-029.A00G 4GB

Kingston 9905599-029.A00G 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Micron Technology 8ATF1G64HZ-2G3E1 8GB

Micron Technology 8ATF1G64HZ-2G3E1 8GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Gloway International (HK) STK4U2400D17161C 16GB

Gloway International (HK) STK4U2400D17161C 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-2400C15-8GTZRX 8GB

G Skill Intl F4-2400C15-8GTZRX 8GB