Corsair CM3B4G2C1600L9 4GB vs G Skill Intl F4-2800C15-8GRK 8GB

总分

Corsair CM3B4G2C1600L9 4GB

Corsair CM3B4G2C1600L9 4GB

总分

G Skill Intl F4-2800C15-8GRK 8GB

G Skill Intl F4-2800C15-8GRK 8GB

差异规格评论

差异

Corsair CM3B4G2C1600L9 4GB

需要考虑的原因
Corsair CM3B4G2C1600L9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 35

左右 34% 更低的延时
更快的读取速度，GB/s

15.2 14.2

测试中的平均数值

G Skill Intl F4-2800C15-8GRK 8GB

需要考虑的原因
G Skill Intl F4-2800C15-8GRK 8GB

报告一个错误

更快的写入速度，GB/s

11.3 9.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Corsair CM3B4G2C1600L9 4GB

G Skill Intl F4-2800C15-8GRK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 35
读取速度，GB/s

15.2 14.2
写入速度，GB/s

9.8 11.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2454 3135

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2133C15-4GRK 4GB

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HT Micron HTH5AN8G8NCJR-VKD 8GB

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G Skill Intl F4-2800C15-8GRK 8GB

G Skill Intl F4-2800C15-8GRK 8GB

Mushkin 991988 (996988) 4GB

Mushkin 991988 (996988) 4GB

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A-DATA Technology ADOVE1A0834E 1GB

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Avant Technology J642GU42J7240N2 16GB

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Kingston 9905403-090.A01LF 4GB

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G Skill Intl F4-2400C15-8GFXR 8GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

Gloway International (HK) STKD4GAM2400-F 8GB

Gloway International (HK) STKD4GAM2400-F 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology BLS4G4D26BFSE.8FBR2 4GB

Crucial Technology BLS4G4D26BFSE.8FBR2 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Crucial Technology BLS8G4D240FSA.16FARG 8GB

Crucial Technology BLS8G4D240FSA.16FARG 8GB