Corsair CM3X8GA2400C11Y2R 8GB vs Crucial Technology BLM16G40C18U4B.M8FB1 16GB

总分

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

总分

Crucial Technology BLM16G40C18U4B.M8FB1 16GB

Crucial Technology BLM16G40C18U4B.M8FB1 16GB

差异规格评论

差异

Corsair CM3X8GA2400C11Y2R 8GB

需要考虑的原因
Corsair CM3X8GA2400C11Y2R 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 27

左右 26% 更低的延时
更快的读取速度，GB/s

19.1 18.4

测试中的平均数值

Crucial Technology BLM16G40C18U4B.M8FB1 16GB

需要考虑的原因
Crucial Technology BLM16G40C18U4B.M8FB1 16GB

报告一个错误

更快的写入速度，GB/s

16.7 13.1

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CM3X8GA2400C11Y2R 8GB

Crucial Technology BLM16G40C18U4B.M8FB1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 27
读取速度，GB/s

19.1 18.4
写入速度，GB/s

13.1 16.7
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3252 3933

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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Hexon Technology Pte Ltd HEXON 1GB

Team Group Inc. TEAMGROUP-SD4-2400 16GB

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Crucial Technology BLM16G40C18U4B.M8FB1 16GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Gold Key Technology Co Ltd NMUD480E86-3200 8GB

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Crucial Technology CT16G4SFD824A.C16FDD 16GB

SK Hynix HMA81GS6JJR8N-VK 8GB

SK Hynix HMA81GS6JJR8N-VK 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Crucial Technology BLS8G4D26BFSE.16FB 8GB

Crucial Technology BLS8G4D26BFSE.16FB 8GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

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Corsair CMWX16GC3200C16W4 16GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Kingston KHX4000C19D4/8GX 8GB

Kingston KHX4000C19D4/8GX 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB