Corsair CM3X8GA2400C11Y2R 8GB vs Crucial Technology BLS8G4S26BFSD.16FD2 8GB

总分

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

总分

Crucial Technology BLS8G4S26BFSD.16FD2 8GB

Crucial Technology BLS8G4S26BFSD.16FD2 8GB

差异规格评论

差异

Corsair CM3X8GA2400C11Y2R 8GB

需要考虑的原因
Corsair CM3X8GA2400C11Y2R 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 25

左右 20% 更低的延时
更快的读取速度，GB/s

19.1 14.9

测试中的平均数值
更快的写入速度，GB/s

13.1 11.5

测试中的平均数值

Crucial Technology BLS8G4S26BFSD.16FD2 8GB

需要考虑的原因
Crucial Technology BLS8G4S26BFSD.16FD2 8GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CM3X8GA2400C11Y2R 8GB

Crucial Technology BLS8G4S26BFSD.16FD2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 25
读取速度，GB/s

19.1 14.9
写入速度，GB/s

13.1 11.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3252 2466

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Crucial Technology BL8G24C16U4B.8FB 8GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Samsung M393B5170FH0-CK0 4GB

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Kingston MSI24D4U7D8MD-16 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB