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Corsair CM3X8GA2400C11Y2R 8GB
G Skill Intl F4-3466C16-8GVK 8GB

Corsair CM3X8GA2400C11Y2R 8GB vs G Skill Intl F4-3466C16-8GVK 8GB

总分
star star star star star
Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

总分
star star star star star
G Skill Intl F4-3466C16-8GVK 8GB

G Skill Intl F4-3466C16-8GVK 8GB

差异 规格 评论

差异

Corsair CM3X8GA2400C11Y2R 8GB 需要考虑的原因
Corsair CM3X8GA2400C11Y2R 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 24
    左右 17% 更低的延时
  • 更快的读取速度，GB/s
    19.1 left arrow 19
    测试中的平均数值
G Skill Intl F4-3466C16-8GVK 8GB 需要考虑的原因
G Skill Intl F4-3466C16-8GVK 8GB
报告一个错误
  • 更快的写入速度，GB/s
    14.4 left arrow 13.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Corsair CM3X8GA2400C11Y2R 8GB
G Skill Intl F4-3466C16-8GVK 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    20 left arrow 24
  • 读取速度，GB/s
    19.1 left arrow 19.0
  • 写入速度，GB/s
    13.1 left arrow 14.4
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3252 left arrow 3482

Corsair CM3X8GA2400C11Y2R 8GB RAM的比较

Avexir Technologies Corporation DDR3-2800 CL12 8GB 8GB
Corsair CMY8GX3M2B2133C9 4GB

G Skill Intl F4-3466C16-8GVK 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
G Skill Intl F4-3466C16-8GVK 8GB
G Skill Intl F4-3466C16-8GVK 8GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
SK Hynix HMA81GU6CJR8N-UH 8GB
SK Hynix HMA81GU6CJR8N-UH 8GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Crucial Technology BLS16G4D240FSE.16FBR 16GB
Crucial Technology BLS16G4D240FSE.16FBR 16GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
A-DATA Technology DDR4 4133 8GB
A-DATA Technology DDR4 4133 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SF464128CKHIWDFSEG 4GB
Smart Modular SF464128CKHIWDFSEG 4GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Corsair CMK32GX4M2Z3600C18 16GB
Corsair CMK32GX4M2Z3600C18 16GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Transcend Information JM3200HLE-16G 16GB
Transcend Information JM3200HLE-16G 16GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
SpecTek Incorporated 16G2666CL19 16GB
SpecTek Incorporated 16G2666CL19 16GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
SK Hynix HMA81GU7CJR8N-VK 8GB
SK Hynix HMA81GU7CJR8N-VK 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Micron Technology 36ASF2G72PZ-2G3B1 16GB
Micron Technology 36ASF2G72PZ-2G3B1 16GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Crucial Technology CT4G4SFS8213.C8FHP 4GB
Crucial Technology CT4G4SFS8213.C8FHP 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Apacer Technology 78.BAGSR.4030B 4GB
Apacer Technology 78.BAGSR.4030B 4GB
内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
G Skill Intl F4-2400C15-4GVR 4GB
G Skill Intl F4-2400C15-4GVR 4GB
内存RAM