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Corsair CM3X8GA2400C11Y2R 8GB
G Skill Intl F4-4000C18-8GTZ 8GB

Corsair CM3X8GA2400C11Y2R 8GB vs G Skill Intl F4-4000C18-8GTZ 8GB

总分
star star star star star
Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

总分
star star star star star
G Skill Intl F4-4000C18-8GTZ 8GB

G Skill Intl F4-4000C18-8GTZ 8GB

差异 规格 评论

差异

Corsair CM3X8GA2400C11Y2R 8GB 需要考虑的原因
Corsair CM3X8GA2400C11Y2R 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 25
    左右 20% 更低的延时
G Skill Intl F4-4000C18-8GTZ 8GB 需要考虑的原因
G Skill Intl F4-4000C18-8GTZ 8GB
报告一个错误
  • 更快的写入速度，GB/s
    16.7 left arrow 13.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Corsair CM3X8GA2400C11Y2R 8GB
G Skill Intl F4-4000C18-8GTZ 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    20 left arrow 25
  • 读取速度，GB/s
    19.1 left arrow 19.1
  • 写入速度，GB/s
    13.1 left arrow 16.7
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3252 left arrow 3845

Corsair CM3X8GA2400C11Y2R 8GB RAM的比较

Avexir Technologies Corporation DDR3-2800 CL12 8GB 8GB
Corsair CMY8GX3M2B2133C9 4GB

G Skill Intl F4-4000C18-8GTZ 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KHX1600C9D3/4GX 4GB
Kingston KHX1600C9D3/4GX 4GB
G Skill Intl F4-3200C18-8GRS 8GB
G Skill Intl F4-3200C18-8GRS 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-2666C19-16GRS 16GB
G Skill Intl F4-2666C19-16GRS 16GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
G Skill Intl F4-4000C18-8GTZ 8GB
G Skill Intl F4-4000C18-8GTZ 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Team Group Inc. TEAMGROUP-D4-3600 4GB
Team Group Inc. TEAMGROUP-D4-3600 4GB
内存RAM
Kingston 99U5474-037.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
Micron Technology 8ATF2G64HZ-3G2B2 16GB
Micron Technology 8ATF2G64HZ-3G2B2 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology CT8G4DFD824A.M16FE 8GB
Crucial Technology CT8G4DFD824A.M16FE 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT16G4DFRA32A.C8FE 16GB
Crucial Technology CT16G4DFRA32A.C8FE 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Gold Key Technology Co Ltd NMUD480E86-3200D 8GB
Gold Key Technology Co Ltd NMUD480E86-3200D 8GB
内存RAM
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
内存RAM
Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
Crucial Technology BLS8G4D240FSC.16FBD2 8GB
Crucial Technology BLS8G4D240FSC.16FBD2 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT8G4SFD8213.C16FADP 8GB
Crucial Technology CT8G4SFD8213.C16FADP 8GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Kingston 9905663-016.A00G 16GB
Kingston 9905663-016.A00G 16GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Patriot Memory (PDP Systems) PSD44G240081S 4GB
Patriot Memory (PDP Systems) PSD44G240081S 4GB
内存RAM