Corsair CM3X8GA2400C11Y2R 8GB vs Gold Key Technology Co Ltd NMGD416E82-4400G 16GB

总分

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

总分

Gold Key Technology Co Ltd NMGD416E82-4400G 16GB

Gold Key Technology Co Ltd NMGD416E82-4400G 16GB

差异规格评论

差异

Corsair CM3X8GA2400C11Y2R 8GB

需要考虑的原因
Corsair CM3X8GA2400C11Y2R 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 27

左右 26% 更低的延时
更快的读取速度，GB/s

19.1 17.6

测试中的平均数值

Gold Key Technology Co Ltd NMGD416E82-4400G 16GB

需要考虑的原因
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB

报告一个错误

更快的写入速度，GB/s

17.4 13.1

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CM3X8GA2400C11Y2R 8GB

Gold Key Technology Co Ltd NMGD416E82-4400G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 27
读取速度，GB/s

19.1 17.6
写入速度，GB/s

13.1 17.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3252 3845

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Super Talent F26UB16GH 16GB

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Apacer Technology AQD-D4U8GN24-SE 8GB

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Kingston 99U5584-004.A00LF 4GB

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Samsung M378B1G73QH0-CK0 8GB

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Mushkin MR[A/B]4U320LLLM16G 16GB

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Crucial Technology BLS4G4D26BFSB.8FE 4GB

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Samsung M393A2G40DB0-CPB 16GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

Corsair CMSX16GX4M2A3000C18 8GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Apacer Technology 78.C1GS7.AUC0B 8GB

Apacer Technology 78.C1GS7.AUC0B 8GB