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Corsair CM3X8GA2400C11Y2R 8GB
Heoriady HX2666CX15D4/4G 4GB

Corsair CM3X8GA2400C11Y2R 8GB vs Heoriady HX2666CX15D4/4G 4GB

总分
star star star star star
Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

总分
star star star star star
Heoriady HX2666CX15D4/4G 4GB

Heoriady HX2666CX15D4/4G 4GB

差异 规格 评论

差异

Corsair CM3X8GA2400C11Y2R 8GB 需要考虑的原因
Corsair CM3X8GA2400C11Y2R 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 77
    左右 74% 更低的延时
  • 更快的读取速度，GB/s
    19.1 left arrow 14.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.1 left arrow 7.6
    测试中的平均数值
Heoriady HX2666CX15D4/4G 4GB 需要考虑的原因
Heoriady HX2666CX15D4/4G 4GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Corsair CM3X8GA2400C11Y2R 8GB
Heoriady HX2666CX15D4/4G 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    20 left arrow 77
  • 读取速度，GB/s
    19.1 left arrow 14.7
  • 写入速度，GB/s
    13.1 left arrow 7.6
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3252 left arrow 1688

Corsair CM3X8GA2400C11Y2R 8GB RAM的比较

Avexir Technologies Corporation DDR3-2800 CL12 8GB 8GB
Corsair CMY8GX3M2B2133C9 4GB

Heoriady HX2666CX15D4/4G 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Heoriady HX2666CX15D4/4G 4GB
Heoriady HX2666CX15D4/4G 4GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CMSO32GX4M2A2133C15 16GB
Corsair CMSO32GX4M2A2133C15 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-4266C19-32GTZR 32GB
G Skill Intl F4-4266C19-32GTZR 32GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Patriot Memory (PDP Systems) 2400 C17 8GB
Patriot Memory (PDP Systems) 2400 C17 8GB
内存RAM
Kingston 99U5474-037.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
G Skill Intl F4-3000C14-16GVK 16GB
G Skill Intl F4-3000C14-16GVK 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Kingston 9965640-001.C00G 16GB
Kingston 9965640-001.C00G 16GB
内存RAM
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Corsair CMW64GX4M4C3466C16 16GB
Corsair CMW64GX4M4C3466C16 16GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Corsair CMD64GX4M4B3000C15 16GB
Corsair CMD64GX4M4B3000C15 16GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Essencore Limited IM48GU88N24-FFFHMB 8GB
Essencore Limited IM48GU88N24-FFFHMB 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
SK Hynix HMA41GU6AFR8N-TF 8GB
SK Hynix HMA41GU6AFR8N-TF 8GB
内存RAM
Corsair CMX8GX3M2A2000C9 4GB
Corsair CMX8GX3M2A2000C9 4GB
Chun Well Technology Holding Limited D4U0832161B 8GB
Chun Well Technology Holding Limited D4U0832161B 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston KV0M5R-MIE 8GB
Kingston KV0M5R-MIE 8GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Crucial Technology CT16G4S24AM.M16FB 16GB
Crucial Technology CT16G4S24AM.M16FB 16GB
内存RAM