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Corsair CM3X8GA2400C11Y2R 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
比较
Corsair CM3X8GA2400C11Y2R 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
总分
Corsair CM3X8GA2400C11Y2R 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
差异
规格
评论
差异
需要考虑的原因
Corsair CM3X8GA2400C11Y2R 8GB
报告一个错误
低于PassMark测试中的延时,ns
20
29
左右 31% 更低的延时
更快的读取速度,GB/s
19.1
12.2
测试中的平均数值
更快的写入速度,GB/s
13.1
9.6
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
报告一个错误
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Corsair CM3X8GA2400C11Y2R 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
20
29
读取速度,GB/s
19.1
12.2
写入速度,GB/s
13.1
9.6
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
3252
2443
Corsair CM3X8GA2400C11Y2R 8GB RAM的比较
Avexir Technologies Corporation DDR3-2800 CL12 8GB 8GB
Corsair CMY8GX3M2B2133C9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB RAM的比较
Samsung M393B1G70BH0-CK0 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CM3X8GA2400C11Y2R 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Kingmax Semiconductor GLNH23F-18---------- 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
Samsung M3 78T2863EHS-CF7 1GB
Samsung M474A2K43BB1-CRC 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-4266C19-8GTZR 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
G Skill Intl F4-5333C22-8GTRG 8GB
Kingston 99U5469-045.A00LF 4GB
G Skill Intl F4-4000C17-16GVKB 16GB
Samsung DDR3 8GB 1600MHz 8GB
Patriot Memory (PDP Systems) PSD416G21332 16GB
Kingston K531R8-MIN 4GB
Kingston MSI24D4S7D8MB-16 16GB
Samsung M391B5673EH1-CH9 2GB
Micron Technology 8ATF1G64AZ-2G6B1 8GB
Kingston KVR533D2N4 512MB
G Skill Intl F4-3200C16-8GTRS 8GB
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F4-2133C15-8GIS 8GB
Kingston 99U5474-028.A00LF 4GB
G Skill Intl F4-2400C15-16GFT 16GB
A-DATA Technology ADOVE1A0834E 1GB
Samsung M378A4G43AB2-CVF 32GB
报告一个错误
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Bug description
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