Corsair CM3X8GA2400C11Y2R 8GB vs InnoDisk Corporation M4C0-AGS1TCIK 16GB

总分

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

总分

InnoDisk Corporation M4C0-AGS1TCIK 16GB

InnoDisk Corporation M4C0-AGS1TCIK 16GB

差异规格评论

差异

Corsair CM3X8GA2400C11Y2R 8GB

需要考虑的原因
Corsair CM3X8GA2400C11Y2R 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 32

左右 38% 更低的延时
更快的读取速度，GB/s

19.1 18.3

测试中的平均数值

InnoDisk Corporation M4C0-AGS1TCIK 16GB

需要考虑的原因
InnoDisk Corporation M4C0-AGS1TCIK 16GB

报告一个错误

更快的写入速度，GB/s

14.9 13.1

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CM3X8GA2400C11Y2R 8GB

InnoDisk Corporation M4C0-AGS1TCIK 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 32
读取速度，GB/s

19.1 18.3
写入速度，GB/s

13.1 14.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3252 3149

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

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Crucial Technology CT32G4SFD832A.M16FF 32GB

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Kingston KHX16LC9/8GX 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240