Corsair CM3X8GA2400C11Y2R 8GB vs Mushkin MR[ABC]4U320GJJM16G 16GB

总分

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

总分

Mushkin MR[ABC]4U320GJJM16G 16GB

Mushkin MR[ABC]4U320GJJM16G 16GB

差异规格评论

差异

Corsair CM3X8GA2400C11Y2R 8GB

需要考虑的原因
Corsair CM3X8GA2400C11Y2R 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 29

左右 31% 更低的延时

Mushkin MR[ABC]4U320GJJM16G 16GB

需要考虑的原因
Mushkin MR[ABC]4U320GJJM16G 16GB

报告一个错误

更快的读取速度，GB/s

20.9 19.1

测试中的平均数值
更快的写入速度，GB/s

15.4 13.1

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CM3X8GA2400C11Y2R 8GB

Mushkin MR[ABC]4U320GJJM16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 29
读取速度，GB/s

19.1 20.9
写入速度，GB/s

13.1 15.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3252 3806

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT41GU7MFR8A-H9 8GB

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Samsung M3 78T2953EZ3-CF7 1GB

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Apacer Technology D12.2344DT.001 4GB

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Kingston KHX2133C14/8G 8GB

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Kingston X5H5PW-MIB 8GB

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A-DATA Technology DQVE1908 512MB

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Micron Technology 9ASF51272PZ-2G3B1 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Transcend Information JM2400HLB-8G 8GB

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Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

G Skill Intl F4-2133C15-8GRB 8GB

G Skill Intl F4-2133C15-8GRB 8GB

Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

Kingston 9905622-057.A00G 4GB

Kingston 9905622-057.A00G 4GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Micron Technology TEAMGROUP-UD4-2400 16GB

Micron Technology TEAMGROUP-UD4-2400 16GB