Corsair CM3X8GA2400C11Y2R 8GB vs Samsung M471A1K43CB1-CTD 8GB

总分

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

总分

Samsung M471A1K43CB1-CTD 8GB

Samsung M471A1K43CB1-CTD 8GB

差异规格评论

差异

Corsair CM3X8GA2400C11Y2R 8GB

需要考虑的原因
Corsair CM3X8GA2400C11Y2R 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 33

左右 39% 更低的延时
更快的读取速度，GB/s

19.1 15.8

测试中的平均数值
更快的写入速度，GB/s

13.1 11.9

测试中的平均数值

Samsung M471A1K43CB1-CTD 8GB

需要考虑的原因
Samsung M471A1K43CB1-CTD 8GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CM3X8GA2400C11Y2R 8GB

Samsung M471A1K43CB1-CTD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 33
读取速度，GB/s

19.1 15.8
写入速度，GB/s

13.1 11.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3252 2824

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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