Corsair CM4X8GE2133C13K4 8GB vs Samsung M393A2G40DB1-CRC 16GB

总分

Corsair CM4X8GE2133C13K4 8GB

Corsair CM4X8GE2133C13K4 8GB

总分

Samsung M393A2G40DB1-CRC 16GB

Samsung M393A2G40DB1-CRC 16GB

差异规格评论

差异

Corsair CM4X8GE2133C13K4 8GB

需要考虑的原因
Corsair CM4X8GE2133C13K4 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 81

左右 70% 更低的延时
更快的读取速度，GB/s

16.1 8.5

测试中的平均数值
更快的写入速度，GB/s

12.3 5.6

测试中的平均数值

Samsung M393A2G40DB1-CRC 16GB

需要考虑的原因
Samsung M393A2G40DB1-CRC 16GB

报告一个错误

更高的内存带宽，mbps

19200 17000

左右 1.13 更高的带宽

规格

完整的技术规格清单

Corsair CM4X8GE2133C13K4 8GB

Samsung M393A2G40DB1-CRC 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 81
读取速度，GB/s

16.1 8.5
写入速度，GB/s

12.3 5.6
内存带宽，mbps

17000 19200

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2860 1651

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avant Technology F6451U64F9333G 4GB

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Crucial Technology BLS4G4D26BFSC.8FB 4GB

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Corsair CMK16GX4M1A2400C16 16GB

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G Skill Intl F4-3466C16-8GVK 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

Essencore Limited IM48GU88N26-GIIHA0 8GB

Essencore Limited IM48GU88N26-GIIHA0 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Essencore Limited KD48GU880-32N220T 8GB

Essencore Limited KD48GU880-32N220T 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Crucial Technology CT4G4SFS8213.C8FADP 4GB

Crucial Technology CT4G4SFS8213.C8FADP 4GB

G Skill Intl F5-6000J3636F16G 16GB

G Skill Intl F5-6000J3636F16G 16GB

Kingston HP24D4S7S8MBP-8 8GB

Kingston HP24D4S7S8MBP-8 8GB