Corsair CM5S16GM4800A40N2 16GB vs Samsung M378A1G44AB0-CWE 8GB

总分

Corsair CM5S16GM4800A40N2 16GB

Corsair CM5S16GM4800A40N2 16GB

总分

Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB

差异规格评论

差异

Corsair CM5S16GM4800A40N2 16GB

需要考虑的原因
Corsair CM5S16GM4800A40N2 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 38

左右 37% 更低的延时
更快的写入速度，GB/s

12.4 10.9

测试中的平均数值

Samsung M378A1G44AB0-CWE 8GB

需要考虑的原因
Samsung M378A1G44AB0-CWE 8GB

报告一个错误

更快的读取速度，GB/s

16.5 13.9

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33 更高的带宽

规格

完整的技术规格清单

Corsair CM5S16GM4800A40N2 16GB

Samsung M378A1G44AB0-CWE 8GB

主要特点

存储器类型

DDR5 DDR4
PassMark中的延时，ns

24 38
读取速度，GB/s

13.9 16.5
写入速度，GB/s

12.4 10.9
内存带宽，mbps

19200 25600

Other

描述

PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

no data / 2400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

3480 2829

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF1G64HZ-2G1A1 8GB

Samsung 1600 CL10 Series 8GB

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G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

SK Hynix HMA81GU6DJR8N-WM 8GB

SK Hynix HMA81GU6DJR8N-WM 8GB