Corsair CMD16GX3M2A1600C7 8GB vs Micron Technology 16ATF4G64HZ-2G6B4 32GB

总分

Corsair CMD16GX3M2A1600C7 8GB

Corsair CMD16GX3M2A1600C7 8GB

总分

Micron Technology 16ATF4G64HZ-2G6B4 32GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

差异规格评论

差异

Corsair CMD16GX3M2A1600C7 8GB

需要考虑的原因
Corsair CMD16GX3M2A1600C7 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 38

左右 8% 更低的延时

Micron Technology 16ATF4G64HZ-2G6B4 32GB

需要考虑的原因
Micron Technology 16ATF4G64HZ-2G6B4 32GB

报告一个错误

更快的读取速度，GB/s

15.9 14.1

测试中的平均数值
更快的写入速度，GB/s

15.1 9.1

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMD16GX3M2A1600C7 8GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 38
读取速度，GB/s

14.1 15.9
写入速度，GB/s

9.1 15.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2471 3264

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT32G4SFD8266.C16FE 32GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Corsair CMD16GX3M2A1600C7 8GB

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G Skill Intl F5-6400J3239G16G 16GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Corsair CMU64GX4M4C3000C15 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Panram International Corporation W4U2400PS-4G 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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G Skill Intl F4-3400C16-8GTZSW 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Crucial Technology CT4G4DFS824A.C8FBR2 4GB

Crucial Technology CT4G4DFS824A.C8FBR2 4GB