Corsair CMD16GX3M2A1866C9 8GB vs Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

总分

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

总分

Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

差异规格评论

差异

Corsair CMD16GX3M2A1866C9 8GB

需要考虑的原因
Corsair CMD16GX3M2A1866C9 8GB

报告一个错误

Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 34

左右 -55% 更低的延时
更快的读取速度，GB/s

17.7 16

测试中的平均数值
更快的写入速度，GB/s

13.7 10.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMD16GX3M2A1866C9 8GB

Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 22
读取速度，GB/s

16.0 17.7
写入速度，GB/s

10.3 13.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 12 14 15
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2782 3066

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PUSKILL DDR3 1600 8G 8GB

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Apacer Technology 78.C1GS7.DFW0C 8GB

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Samsung M3 78T2863EHS-CF7 1GB

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Team Group Inc. Team-Elite-2133 4GB

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Samsung M393A2K40BB1-CRC 16GB

Samsung M393A2K40BB1-CRC 16GB

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V-Color Technology Inc. TL48G36S8KBNRGB18 8GB

AMD AE34G1601U1 4GB

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G Skill Intl F4-3200C16-4GRB 4GB

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Kingston 9905403-061.A00LF 2GB

Crucial Technology BLS4G4D240FSA.8FARG 4GB

Crucial Technology BLS4G4D240FSA.8FARG 4GB