Corsair CMD16GX3M2A1866C9 8GB vs Samsung M471A1K43DB1-CTD 8GB

总分

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

总分

Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

差异规格评论

差异

Corsair CMD16GX3M2A1866C9 8GB

需要考虑的原因
Corsair CMD16GX3M2A1866C9 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 35

左右 3% 更低的延时
更快的读取速度，GB/s

16 15.7

测试中的平均数值

Samsung M471A1K43DB1-CTD 8GB

需要考虑的原因
Samsung M471A1K43DB1-CTD 8GB

报告一个错误

更快的写入速度，GB/s

11.8 10.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMD16GX3M2A1866C9 8GB

Samsung M471A1K43DB1-CTD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 35
读取速度，GB/s

16.0 15.7
写入速度，GB/s

10.3 11.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2782 2767

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Corsair CMT32GX4M2C3000C15 16GB

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Samsung M378A5244CB0-CRC 4GB

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Micron Technology 4ATF51264AZ-2G3B1 4GB

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G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F4-3200C16-4GTZB 4GB

G Skill Intl F4-3200C16-4GTZB 4GB

AMD R5316G1609U2K 8GB

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A-DATA Technology AO2P32NCST2-BZ7SHD 16GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Kingston 9965640-015.A00G 32GB

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Apacer Technology 78.A1GC6.9H10C 2GB

Apacer Technology 78.A1GC6.9H10C 2GB

SK Hynix HMA84GR7MFR4N-TF 32GB

SK Hynix HMA84GR7MFR4N-TF 32GB