Corsair CMD16GX3M2A1866C9 8GB vs Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

总分

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

总分

Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

差异规格评论

差异

Corsair CMD16GX3M2A1866C9 8GB

需要考虑的原因
Corsair CMD16GX3M2A1866C9 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 83

左右 59% 更低的延时
更快的读取速度，GB/s

16 14.3

测试中的平均数值
更快的写入速度，GB/s

10.3 8.1

测试中的平均数值

Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

需要考虑的原因
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMD16GX3M2A1866C9 8GB

Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 83
读取速度，GB/s

16.0 14.3
写入速度，GB/s

10.3 8.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2782 1774

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5773CH0-CH9 2GB

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Patriot Memory (PDP Systems) PSD416G26662 16GB

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Kingston 9905471-001.A01LF 2GB

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AMD R538G1601U2S-UO 8GB

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Avant Technology W641GU42J9266NB 8GB

Avant Technology W641GU42J9266NB 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

A-DATA Technology AO1P32MCST2-BW4S 16GB

A-DATA Technology AO1P32MCST2-BW4S 16GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F4-3333C16-16GVK 16GB

G Skill Intl F4-3333C16-16GVK 16GB